Semiconductor devices having crack-inhibiting structures

ABSTRACT

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.

CROSS-REFERENCE TO RELATED APPLICATION

This application contains subject matter related to a concurrently-filedU.S. patent application, titled “SEMICONDUCTOR PACKAGES HAVINGCRACK-INHIBITING STRUCTURES.” The related application, of which thedisclosure is incorporated by reference herein, is assigned to MicronTechnology, Inc., and is identified by attorney docket number010829-9366.US00.

TECHNICAL FIELD

The present technology generally relates to semiconductor devices havingcrack-inhibiting structures, and more particularly relates tosemiconductor devices having waffle metal structures formed beneathbonds pads thereof.

BACKGROUND

Packaged semiconductor dies, including memory chips, microprocessorchips, and imager chips, typically include a semiconductor die mountedon a substrate and encased in a protective covering. The semiconductordie can include functional features, such as memory cells, processorcircuits, and imager devices, as well as bond pads electricallyconnected to the functional features. The bond pads can be electricallyconnected to terminals outside the protective covering to allow thesemiconductor die to be connected to higher level circuitry.

In some semiconductor packages, the bond pads of a semiconductor die canbe electrically coupled to a substrate via a flip-chip die attachoperation (e.g., a thermo-compression bonding or mass reflow operation)in which conductive pillars are formed on the bond pads and coupled tothe substrate via a bond material that is disposed between theconductive pillars and the substrate. To attach the bond material to thesubstrate, the semiconductor package is heated above the liquidustemperature of the bond material to reflow the bond material to achievea successful bond. However, heating the semiconductor package and/orsubsequently cooling the semiconductor package can induce significantmechanical stress between the semiconductor die and the substrate due toa mismatch in the coefficients of thermal expansion of these components.Often, the stress can induce cracking of the semiconductor die near oneor more of the bond pads, which can render the semiconductor packageinoperable.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present technology can be better understood withreference to the following drawings. The components in the drawings arenot necessarily to scale. Instead, emphasis is placed on illustratingclearly the principles of the present technology.

FIGS. 1A and 1B are side cross-sectional views of a semiconductorpackage at various stages in a method of manufacture in accordance withembodiments of the present technology.

FIG. 2A is an enlarged, side cross-sectional view of a portion of thesemiconductor package shown in FIGS. 1A and 1B and having ametallization structure configured in accordance with the prior art.

FIG. 2B is a bottom cross-sectional view of the portion of thesemiconductor package shown in FIG. 2A configured in accordance with theprior art.

FIG. 3A is an enlarged, side cross-sectional view of a portion of thesemiconductor package shown in FIGS. 1A and 1B and having ametallization structure configured in accordance with an embodiment ofthe present technology.

FIGS. 3B and 3C are bottom cross-sectional views of the portion of thesemiconductor package shown in FIG. 3A configured in accordance withembodiments of the present technology.

FIG. 4 is a schematic view of a system that includes a semiconductordevice or package configured in accordance with embodiments of thepresent technology.

DETAILED DESCRIPTION

Specific details of several embodiments of semiconductor devices, andassociated systems and methods, are described below. A person skilled inthe relevant art will recognize that suitable stages of the methodsdescribed herein can be performed at the wafer level or at the dielevel. Therefore, depending upon the context in which it is used, theterm “substrate” can refer to a wafer-level substrate or to asingulated, die-level substrate. Furthermore, unless the contextindicates otherwise, structures disclosed herein can be formed usingconventional semiconductor-manufacturing techniques. Materials can bedeposited, for example, using chemical vapor deposition, physical vapordeposition, atomic layer deposition, plating, electroless plating, spincoating, and/or other suitable techniques. Similarly, materials can beremoved, for example, using plasma etching, wet etching,chemical-mechanical planarization, or other suitable techniques. Aperson skilled in the relevant art will also understand that thetechnology may have additional embodiments, and that the technology maybe practiced without several of the details of the embodiments describedbelow with reference to FIGS. 1A-4.

In several of the embodiments described below, a semiconductor devicecan include a semiconductor substrate including circuit elements, and ametallization structure (e.g., a back end of line (BEOL) structure)formed at least partially over the substrate. The metallizationstructure can include bond pads electrically coupled to the circuitelements. More particularly, the metallization structure can include oneor more layers of conductive material electrically coupling the bondpads to the circuit elements and one or more layers of insulatingmaterial at least partially surrounding the conductive material. In someembodiments, the insulating material comprises a mechanically fragilematerial, such as a low-κ dielectric material, that can be susceptibleto cracking or other mechanical and/or electrical failure due tomechanical stresses—for example, thermomechanical stresses induced bydirectly attaching the semiconductor device to a package substrate.

Accordingly, the metallization structure can further includecrack-inhibiting structures positioned beneath some or all of the bondpads and configured to inhibit or retard the propagation of cracksthrough the insulating material. In some embodiments, thecrack-inhibiting structures include (i) a metal lattice extendinglaterally between the bond pad and the substrate and (ii) barriermembers extending vertically between the metal lattice and the bond pad.In some embodiments, the barrier members are metal walls. In someembodiments, the barrier members include (i) first barrier members thatextend laterally in a first direction beneath the bond pad and have afirst length, and (ii) second barrier members that extend laterallybeneath the bond pad in a second direction and have a second length,wherein the first length is longer than the second length, and whereinthe first direction is different than the second direction. Thecrack-inhibiting structures can reduce the likelihood of mechanicalfailure around the bond pads after, for example, a flip-chip die attachoperation (e.g., a thermo-compression bonding (TCB) or mass reflowoperation) is carried out to secure the bond pads of the semiconductordevice to a package substrate.

Numerous specific details are disclosed herein to provide a thorough andenabling description of embodiments of the present technology. A personskilled in the art, however, will understand that the technology mayhave additional embodiments and that the technology may be practicedwithout several of the details of the embodiments described below withreference to FIGS. 1A-4. For example, some details of semiconductordevices and/or packages well known in the art have been omitted so asnot to obscure the present technology. In general, it should beunderstood that various other devices and systems in addition to thosespecific embodiments disclosed herein may be within the scope of thepresent technology.

As used herein, the terms “vertical,” “lateral,” “upper,” “lower,”“above,” and “below” can refer to relative directions or positions offeatures in the semiconductor devices in view of the orientation shownin the Figures. For example, “upper” or “uppermost” can refer to afeature positioned closer to the top of a page than another feature.These terms, however, should be construed broadly to includesemiconductor devices having other orientations, such as inverted orinclined orientations where top/bottom, over/under, above/below,up/down, and left/right can be interchanged depending on theorientation.

FIGS. 1A and 1B are side cross-sectional views of a semiconductorpackage 100 (“package 100”) at various stages in a method of manufacturein accordance with embodiments of the present technology. Moreparticularly, FIGS. 1A and 1B illustrate the package 100 at thebeginning and end, respectively, of a flip-chip die attach operation.Referring to FIGS. 1A and 1B together, the package 100 can include asemiconductor die 110 carried by a package substrate 102 andelectrically coupled to the package substrate 102 via a plurality ofinterconnects 104.

In the illustrated embodiment, the semiconductor die 110 includes asemiconductor substrate 112 (e.g., a silicon substrate, a galliumarsenide substrate, an organic laminate substrate, etc.) having a firstside/surface 113 a and a second side/surface 113 b opposite the firstside 113 a. The first side 113 a of the semiconductor substrate 112 canbe an active side including one or more circuit elements 114 (e.g.,wires, traces, interconnects, transistors, etc.; shown schematically)formed in and/or on the first side 113 a. The circuit elements 114 caninclude, for example, memory circuits (e.g., dynamic random memory(DRAM) or other type of memory circuits), controller circuits (e.g.,DRAM controller circuits), logic circuits, and/or other circuits. Inother embodiments, the semiconductor substrate 112 can be a “blank”substrate that does not include integrated circuit components and thatis formed from, for example, crystalline, semi-crystalline, and/orceramic substrate materials, such as silicon, polysilicon, aluminumoxide (Al₂O₃), sapphire, and/or other suitable materials. In theillustrated embodiment, the semiconductor die 110 further includes ametallization structure 116 formed over at least a portion of the firstside 113 a of the semiconductor substrate 112. As described in greaterdetail below with reference to FIG. 2A, the metallization structure 116can include one or more dielectric layers, metal layers, interconnects,vias, etc., and is configured to electrically couple the circuitelements 114 to the interconnects 104.

The package substrate 102 can include a redistribution layer, aninterposer, a printed circuit board, a dielectric spacer, anothersemiconductor die (e.g., a logic die), or another suitable substrate.The package substrate 102 can further include electrical connectors 103(e.g., solder balls, conductive bumps, conductive pillars, conductiveepoxies, and/or other suitable electrically conductive elements)electrically coupled to the package substrate 102 and configured toelectrically couple the package 100 to external devices or circuitry(not shown).

In the illustrated embodiment, the first side 113 a of the semiconductorsubstrate 112 faces the package substrate 102 (e.g., in a direct chipattach (DCA) configuration). In other embodiments, the semiconductor die110 can be arranged differently. For example, the second side 113 b ofthe semiconductor substrate 112 can face the package substrate 102 andthe semiconductor die 110 can include one or more TSVs extending throughthe semiconductor substrate 112 to electrically couple the circuitelements 114 to the interconnects 104. Moreover, while only a singlesemiconductor die 110 is shown in FIGS. 1A and 1B, in other embodimentsthe package 100 can include one or more additional semiconductor diesstacked on and/or over the semiconductor die 110.

In the illustrated embodiment, individual ones of the interconnectsinclude (i) a first conductive feature (e.g., a conductive pillar 106)electrically connected to the metallization structure 116 of thesemiconductor die 110 and (ii) a bond material 108 formed between theconductive pillar 106 and the package substrate 102. In someembodiments, second conductive features (e.g., conductive pads) can beformed on the package substrate 102, and the bond material 108 can beformed between the second conductive features and the conductive pillars106. The conductive pillars 106 can be formed of any suitably conductivematerial such as, for example, copper, nickel, gold, silicon, tungsten,conductive-epoxy, combinations thereof, etc., and can be formed fromusing an electroplating, electroless-plating, or other suitable process.In some embodiments, the interconnects 104 can also include barriermaterials (not shown; e.g., nickel, nickel-based intermetallic, and/orgold) formed over end portions of the conductive pillars 106. Thebarrier materials can facilitate bonding and/or prevent or at leastinhibit the electromigration of copper or other metals used to form theconductive pillars 106. While six interconnects 104 are illustrated inFIGS. 1A and 1B, the package 100 can include a smaller or greater numberof interconnects 104. For example, the package 100 can include tens,hundreds, thousands, or more interconnects 104 arrayed between thesemiconductor die 110 and the package substrate 102.

In some embodiments, the package 100 can further include an underfill ormolded material formed over the package substrate 102 and/or at leastpartially around the semiconductor die 110. In some embodiments, thepackage 100 can include other components such as external heatsinks, acasing (e.g., thermally conductive casing), electromagnetic interference(EMI) shielding components, etc.

In FIG. 1A, the package 100 is illustrated at the beginning of the TCBoperation, in which heating has caused the bond material 108 in theinterconnects 104 to reflow and electrically connect the conductivepillars 106 to the package substrate 102. In some embodiments, thepackage 100 can be heated to 200° C. or greater (e.g., greater thanabout 217° C.) to reflow the bond material 108. During the TCBoperation, a compressive force is applied to secure the interconnects104 to the package substrate 102. In FIG. 1B, the package 100 isillustrated at the completion of the TCB operation, after thecompressive force has been applied and after cooling the package 100(e.g., to about 25° C.). By cooling the package 100 at this point, thebond material 108 can be solidified, securing the semiconductor die 110to the package substrate 102.

As shown in FIG. 1B, one drawback with the illustrated TCB operation isthat cooling of the package 100 can cause the semiconductor die 110 andthe package substrate 102 to warp or bend relative to one another, whichcan introduce mechanical (e.g., thermomechanical) stresses into thepackage 100 (e.g., chip-package interaction (CPI) stresses). Forexample, the semiconductor die 110 can have a coefficient of thermalexpansion (CTE) that is different than a CTE of the package substrate102, and the CTE mismatch between these components can cause them towarp relative to one another during cooling and/or heating of thepackage 100. In some embodiments, the CTE of the semiconductor die 110is lower than the CTE of the package substrate 102. Accordingly, asshown in FIG. 1B, the package substrate 102 can have a warped,non-planar shape after cooling. In other embodiments, the semiconductordie 110 or both the semiconductor die 110 and the package substrate 102can have a non-planar, warped shape after cooling. As further shown inFIG. 1B, the CTE mismatch between the semiconductor die 110 and thepackage substrate 102 can laterally stress and bend the interconnects104. This can cause cracks to form and propagate within themetallization structure 116, which can cause mechanical and/orelectrical failures within the package 100.

More particularly, FIG. 2A is an enlarged, side cross-sectional view ofa portion of the package 100 shown in FIGS. 1A and 1B configured inaccordance with the prior art. As shown in FIG. 2A, the metallizationstructure 116 includes a plurality of conductive layers 222 (e.g.,metallization layers; individually labeled as first through thirdconductive layers 222 a-222 c) that are at least partially surrounded byan insulating material 224. In general, the metallization structure 116can be formed as part of a back end of line (BEOL) fabrication processas is known in the art. For example, the insulating material 224 caninclude a plurality of layers, and the layers of the insulating material224 and the conductive layers 222 can be additively built (e.g.,disposed) upon the active first side 113 a of the semiconductorsubstrate 112. The conductive layers 222 can be formed from electricallyconductive materials such as, for example, copper, tungsten, aluminum,gold, titanium nitride, tantalum, etc., and can include more or fewerthan the three layers illustrated in FIG. 2A (e.g., two layers, fourlayers, five layers, more than five layers, etc.). The conductive layers222 are configured to couple the circuit elements 114 (FIGS. 1A and 1B)to corresponding ones of the interconnects 104. In the illustratedembodiment, for example, the third conductive layer 222 c can have afirst surface 221 a (opposite a second surface 221 b) that is at leastpartially exposed from the insulating material 224 at an opening 226therein, and that defines a bond pad 225 of the semiconductor die 110.The conductive pillar 106 of the illustrated one of the interconnects104 is attached and electrically coupled to the first surface 221 a ofthe bond pad 225.

The insulating material 224 can comprise one or more layers of the sameor different passivation, dielectric, or other suitable insulatingmaterial. For example, the insulating material 224 can comprise siliconoxide, silicon nitride, poly-silicon nitride, poly-silicon oxide,tetraethyl orthosilicate (TEOS), etc. In some embodiments, theinsulating material 224 can at least partially comprise a dielectricmaterial having a small dielectric constant relative to silicon oxide (a“low-κ dielectric material”). Such low-κ dielectric materials caninclude fluorine-doped silicon dioxide, carbon-doped silicon dioxide,porous silicon dioxide, organic polymeric dielectrics, silicon basedpolymeric dielectrics, etc. Notably, low-κ dielectric materials canincrease the performance of the package 100, but can be mechanicallyfragile compared to conventional (e.g., higher-κ) dielectric materials.

Accordingly, the insulating material 224 can be relatively more prone tomechanical failure (e.g., cracking, delamination, etc.) due to themechanical stresses induced by warping of the package 100 than otherportions/components of the package 100. For example, as shown in FIG.2A, the insulating material 224 can include a region 223 that is mostsusceptible to stress-induced mechanical failure. The region 223 (i) isdirectly adjacent to the bond pad 225 and (ii) extends between andelectrically isolates the bond pad 225 and the second conductive layer222 b. Therefore, the metallization structure 116 does not include anyconductive structure, such as a vertically-extending via, that iselectrically coupled to the bond pad 225 directly beneath the bond pad225 (e.g., beneath the bond pad 225 between the bond pad 225 and thesemiconductor substrate 112) and that may provide additional mechanicalstrength in the region 223.

FIG. 2B is a top cross-sectional view of the portion of the package 100shown in FIG. 2A taken through the region 223 of the insulating material224. The footprints of the bond pad 225 and the conductive pillar 106are shown schematically in FIG. 2B. As shown, the conductive pillar 106can have a generally oblong cross-sectional shape including (i) opposingfirst and second side portions 228 a and 228 b and (ii) opposing thirdand fourth side portions 229 a and 229 b. In other embodiments, theconductive pillar 106 can have other cross-sectional shapes such as, forexample, rectilinear, polygonal, circular, irregular, etc. Referring toFIGS. 2A and 2B together, the conductive pillar 106 is stressed, bent,slanted, warped, etc., in a direction indicated by arrow X (e.g., in adirection generally from the first side portion 228 a toward the secondside portion 228 b). Accordingly, the conductive pillar 106 can impart(i) a relatively high tensile stress on the metallization structure 116(e.g., on the bond pad 225 and the insulating material 224) beneath thefirst side portion 228 a and (ii) a relatively high compressive stressbeneath the second side portion 228 b.

The mechanical stresses induced by the conductive pillar 106 can causescracks to form in the relatively mechanically weak insulating material224 in, for example, the region 223 that is directly adjacent to thebond pad 225 and therefore subject to the greatest stresses. Forexample, as shown in FIGS. 2A and 2B, one or more cracks 227 canpropagate through the insulating material 224. It is expected that anyof the cracks 227 will generally (i) originate in the insulatingmaterial 224 at or near the first side portion 228 a (e.g., laterallyoutside or within the footprint of the conductive pillar 106 near thefirst side portion 228 a) and (ii) propagate laterally in the directionindicated by arrow X from proximate the first side portion 228 a (e.g.,a region of high tensile stress) toward the second side portion 228 b(e.g., a region of high compressive stress). Moreover, it is expectedthat any of the cracks 227 can extend vertically toward, into, and/orpast the conductive layers 222 a, b. As one of skill in the art willunderstand, however, the particular stresses imparted on themetallization structure 116, and the propagation pattern of anyresulting cracks, will depend on the specific configurations (e.g.,dimensions, shapes, material composition, etc.) of the conductive pillar106 and the metallization structure 116. In some embodiments, forexample, cracks may propagate in a direction that generally extendsbetween the third and fourth side portions 229 a, b, and/or in adirection from the second side portion 228 b toward the first sideportion 228 a. Cracking of the insulating material 224 can causemechanical and/or electrical failure of the semiconductor die110—rendering the package fully or partially inoperable. In someinstances, for example, the conductive pillar 106 can fully or partiallyrip out of the metallization structure 116.

FIG. 3A is an enlarged, side cross-sectional view of a portion of thepackage 100 shown in FIGS. 1A and 1B and having a metallizationstructure 316 configured in accordance with an embodiment of the presenttechnology. The metallization structure 316 can include featuresgenerally similar to the metallization structure 116 described in detailabove with reference to FIGS. 1A-2B. For example, the metallizationstructure 316 includes the conductive layers 222 and the insulatingmaterial 224. Likewise, the third conductive layer 222 c is partiallyexposed in the opening 226 of the insulating material 224 and definesthe bond pad 225. In the illustrated embodiment, however, themetallization structure 316 further includes a crack-blocking orcrack-inhibiting structure 330 (“structure 330”) positioned beneath thebond pad 225 between the bond pad 225 and the semiconductor substrate112. In the illustrated embodiment, the structure 330 includes (i) aconductive (e.g., metal) layer 332 and (ii) a plurality of barrier wallsor barrier members 334. The structure 330 is configured to inhibit,block, and/or retard propagation of cracks through the insulatingmaterial 224.

FIGS. 3B and 3C are bottom cross-sectional views of the portion of thepackage 100 shown in FIG. 3A taken through the conductive layer 332 andthe barrier members 334, respectively. The footprint of the conductivepillar 106 is shown schematically in FIGS. 3B and 3C. Moreover, theinsulating material 224 is omitted in FIG. 3C for the sake of clarity.

Referring to FIGS. 3A and 3B together, the conductive layer 332 extendslaterally between the semiconductor substrate 112 and the bond pad 225and includes a first surface 335 a facing the second surface 221 b ofthe bond pad 225, and a second surface 335 b opposite the first surface335 a. Therefore, in some embodiments, the conductive layer 332 ispositioned beneath the bond pad 225 and generally parallel to the bondpad 225. In the illustrated embodiment, the bond pad 225 and theconductive layer 332 have substantially the same planform shape anddimensions and the bond pad 225 is superimposed over the conductivelayer 332. In other embodiments, the conductive layer 332 can have agreater width than the bond pad 225 and can extend laterally beyond thebond pad 225, or the conductive layer 332 can be entirely within afootprint of (e.g., entirely beneath) the bond pad 225.

In some embodiments, the conductive layer 332 can be formed as part ofthe same BEOL fabrication process used to manufacture the first andsecond conductive layers 222. Accordingly, the conductive layer 332 canbe generally similar to the conductive layers 222 and can comprisecopper, tungsten, aluminum, gold, titanium nitride, tantalum, etc. Incertain embodiments, the conductive layer 332 is electrically isolatedfrom the circuit elements 114 (FIGS. 1A and 1B) of the package 100. Thatis, the conductive layer 332 can be formed as an “island” of conductivematerial that provides added mechanical strength beneath the bond pad225 without serving any electrical routing function. Accordingly, insome embodiments, the structure 330 is not electrically coupled to anyof the circuit elements 114, and the bond pad 225 can be electricallycoupled to one or more of the circuit elements 114 (FIGS. 1A and 1B) viaan electrical path that does not include the structure 330.

As best seen in FIG. 3B, the conductive layer 332 can have a “waffle” or“lattice” arrangement. More specifically, the conductive layer 332 candefine a lattice structure including a plurality of intersecting firstlanes 336 a and second lanes 336 b that define a plurality of openings337 extending through the conductive layer 332. In some embodiments, thefirst lanes 336 a extend in a first direction between opposing first andsecond sides 338 a and 338 b of the conductive layer 332, and the secondlanes 336 b extend in a second direction, different than the firstdirection, between opposing third and fourth sides 339 a and 339 b ofthe conductive layer 332. In the illustrated embodiment, the first andsecond lanes 336 a, b are arranged generally orthogonal to one anothersuch that the openings 337 have a generally rectilinear (e.g., square)cross-sectional shape. In other embodiments, the conductive layer 332can define a lattice structure having other configurations, dimensions,etc. For example, the first and second lanes 336 a, b can be obliquelyangled relative to one another such that the openings 337 have a diamondor other polygonal cross-sectional shape. In other embodiments,individual ones of the first lanes 336 a can be arranged such that theyare not parallel to one another, individual ones of the second lanes 336b can be arranged such that they are not parallel to one another, etc.

As further shown in FIGS. 3A and 3B, the insulating material 224 canextend through the openings 337 in the conductive layer 332. In someembodiments, the insulating material 224 and the openings 337 compriseabout 30% or less of the area and/or volume of the conductive layer 332.In some embodiments, the conductive layer 332 has a lattice arrangementdue to manufacturing constraints that do not permit a solid or integrallayer to be formed beneath the bond pad 225. For example, the latticearrangement of the conductive layer 332 can enable probe testing of thebond pad 225. In other embodiments, however, the conductive layer 332can include an integral layer or other arrangement of, for example,metal material.

Referring to FIG. 3A, the barrier members 334 extend vertically betweenthe first surface 335 a of the conductive layer 332 and the secondsurface 221 b of the bond pad 225. In some embodiments, one or more ofthe barrier members 334 are attached to the first surface 335 a of theconductive layer 332 and/or to the second surface 221 b of the bond pad225. In other embodiments, end portions of the barrier members 334 arepositioned adjacent to the bond pad 225 and the conductive layer 332 butnot connected thereto. Referring to FIG. 3C, the barrier members 334 caninclude a plurality of first barrier members 334 a and a plurality ofsecond barrier members 334 b arranged over the first surface 335 a ofthe conductive layer 332 and spaced apart from one another. In theillustrated embodiment, the first barrier members 334 a extend laterallyalong the first lanes 336 a and the second barrier members 334 b extendlaterally along the second lanes 336 b.

More particularly, the first barrier members 334 a can extend generallycontinuously along the first lanes 336 a from adjacent to the first side338 a of the conductive layer 332 to adjacent to the second side 338 bof the conductive layer 332. The second barrier members 334 b are spacedapart along the second lanes 336 b such that they do not intersect thefirst barrier members 334 a (e.g., along the second lanes 336 adjacentto the intersections between the first and second lanes 336 a, b).Accordingly, the first barrier members 334 a can have a length that isgreater than a length of the second barrier members 334 b. In someembodiments, the length of first barrier members 334 a is substantiallyequal to a width of the bond pad 225 such that the first barrier members334 a extend laterally between opposing first and second sides of thebond pad 225. In some embodiments, the second barrier members 334 b canhave a length that is substantially equal to a width of the openings337. Moreover, in the illustrated embodiment, three first barriermembers 334 a extend parallel to one another along individual ones ofthe first lanes 336 a, and groups of three second barrier members 334 bextend parallel to one another and are spaced apart along individualones of the second lanes 336 b. In other embodiments, more or fewer ofthe barrier members 334 can be positioned along the first lanes 336 aand/or the second lanes 336 b and can have other orientations relativeto one another (e.g., obliquely angled). In some embodiments, forexample, the first and second barrier members 334 a, b can beinterconnected to form another lattice structure.

The barrier members 334 can be formed from materials that have a greatermechanical strength than the insulating material 224. In someembodiments, for example, the barrier members 334 comprise a metalmaterial (e.g., tungsten). Moreover, the barrier members 334 can beformed as part of or an extension of the BEOL fabrication process usedto form the metallization structure 316. For example, after forming theconductive layer 332 and a layer of the insulating material 224 over theconductive layer 332, the layer of the insulating material 224 can beetched to form vias and the vias can be filled with tungsten and/oranother suitable material to form the barrier members 334. Morespecifically, in some embodiments, the tungsten and/or other materialcan be plated onto the conductive layer 332 in the vias using a suitableelectroplating or electroless-plating process, as is well known in theart. In some embodiments, the barrier members 334 have a rectilinear(e.g., rectangular) cross-sectional shape while, in other embodiments,the barrier members 334 can have other suitable cross-sectional shapes(e.g., circular, polygonal, irregular, etc.). In some embodiments, thebarrier members 334 comprise about 20% or more (e.g., about 23%) of thevolume between the bond pad 225 and the conductive layer 332.

Referring to FIGS. 3A-3C together, in operation, the structure 330 isconfigured to inhibit, block, and/or retard propagation ofstress-induced cracks through the insulating material 224 and/or theconductive layers 222. As described in detail above with reference toFIGS. 2A and 2B, any cracks are expected to (i) originate in theinsulating material 224 beneath the bond pad 225 proximate to thefootprint (e.g., beneath the perimeter of) the conductive pillar 106,and (ii) propagate laterally across the footprint of the conductivepillar 106. Accordingly, the barrier members 334—which are formed of amaterial that is mechanically stronger than the insulating material224—are positioned to block cracks from propagating a great distancelaterally through the insulating material 224, thereby inhibiting oreven preventing mechanical and/or electrical failure of the interconnect104 and/or the metallization structure 316. For example, a crackoriginating at or near the perimeter of the footprint of the conductivepillar 106 and propagating laterally inward (e.g., in the directionindicated by the arrow X) will be blocked, deflected, etc., at least bythe first barrier members 334 a which are arranged generally orthogonalthereto. Moreover, the conductive layer 332 can inhibit cracks frompropagating vertically (e.g., in a direction toward the semiconductorsubstrate 112) through the insulating material 224 and/or through thefirst and second conductive layers 222 a, b.

Notably, in the illustrated embodiment, the longer first barrier members334 a are arranged orthogonal to the likely direction of crackpropagation indicated by the arrow X—for example, from a region of hightensile stress beneath the first side portion 228 a of the conductivepillar 106 to a region of high compressive stress beneath the secondside portion 228 b of the conductive pillar 106. Accordingly, thestructure 330 can include more high-strength barrier material positionedalong a likely direction of crack propagation than along a less likelydirection. In some embodiments, the structure 330 can include additionalones of the first barrier members 334 a and/or the first barrier members334 a can be relatively thicker than the second barrier members 334 b tofurther increase the mechanical strength of the metallization structure316 and thus further inhibit crack propagation through the insulatingmaterial 224.

Accordingly, the metallization structure 316 is expected to increase themechanical strength of the semiconductor die 110 as compared toconventional metallization structures (e.g., FIGS. 2A and 2B) thatinclude a weak dielectric layer beneath bond pads. The disclosedmetallization structures can therefore reduce the likelihood ofmechanical and/or electrical failure due to stress-induced cracking.Thus, the metallization structures of the present technology areexpected to reduce yield loss during manufacturing of semiconductorpackages (e.g., after a TCB bonding step, as a result of thermal cyclingand/or thermal shock during package reliability tests, etc.) and toincrease the reliability of semiconductor packages during operation(e.g., during power cycling during end-customer use). The metallizationstructures of the present technology are also expected to increasepackage performance by enabling the use of less mechanically strongdielectric materials (e.g., low-κ dielectric materials).

From the foregoing, it will be appreciated that specific embodiments ofthe present technology have been described herein for purposes ofillustration, but that various modifications may be made withoutdeviating from the scope of the present technology. For example, inparticular embodiments, the details of the crack-inhibiting structuresmay be different than those shown in the foregoing Figures. In someembodiments, the various embodiments may be combined to, for example,include combinations of (i) metal lattice structures having differentarrangements of lanes, openings, etc., and/or (ii) barrier membershaving different arrangements, sizes, shapes, etc., that are formed inan insulating material beneath a bond pad. Moreover, barrier members canhave various spacings and arrangements relative to a footprint of aconductive column or other conductive feature attached to the bond pad.

Any one of the semiconductor devices and/or packages having the featuresdescribed above with reference to FIGS. 1A and 3A-3C can be incorporatedinto any of a myriad of larger and/or more complex systems, arepresentative example of which is system 400 shown schematically inFIG. 4. The system 400 can include a processor 402, a memory 404 (e.g.,SRAM, DRAM, flash, and/or other memory devices), input/output devices406, and/or other subsystems or components 408. The semiconductor diesand/or packages described above with reference to FIGS. 1A and 3A-3C canbe included in any of the elements shown in FIG. 4. The resulting system400 can be configured to perform any of a wide variety of suitablecomputing, processing, storage, sensing, imaging, and/or otherfunctions. Accordingly, representative examples of the system 400include, without limitation, computers and/or other data processors,such as desktop computers, laptop computers, Internet appliances,hand-held devices (e.g., palm-top computers, wearable computers,cellular or mobile phones, personal digital assistants, music players,etc.), tablets, multi-processor systems, processor-based or programmableconsumer electronics, network computers, and minicomputers. Additionalrepresentative examples of the system 400 include lights, cameras,vehicles, etc. With regard to these and other example, the system 400can be housed in a single unit or distributed over multipleinterconnected units, e.g., through a communication network. Thecomponents of the system 400 can accordingly include local and/or remotememory storage devices and any of a wide variety of suitablecomputer-readable media.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. Accordingly, the invention is not limited except as by theappended claims. Furthermore, certain aspects of the new technologydescribed in the context of particular embodiments may also be combinedor eliminated in other embodiments. Moreover, although advantagesassociated with certain embodiments of the new technology have beendescribed in the context of those embodiments, other embodiments mayalso exhibit such advantages and not all embodiments need necessarilyexhibit such advantages to fall within the scope of the technology.Accordingly, the disclosure and associated technology can encompassother embodiments not expressly shown or described herein.

1. A semiconductor device, comprising: a substrate including circuitelements; and a metallization structure over the substrate, wherein themetallization structure includes— an insulating material; a bond padexposed from the insulating material and electrically coupled to atleast one of the circuit elements; and a crack-inhibiting structureincluding (a) a metal lattice extending laterally between the bond padand the substrate and (b) barrier members extending vertically betweenthe metal lattice and the bond pad.
 2. The semiconductor device of claim1 wherein the crack-inhibiting structure is not electrically coupled toany of the circuit elements.
 3. The semiconductor device of claim 1wherein the metal lattice defines a plurality of openings, and whereinthe insulating material is in the openings.
 4. The semiconductor deviceof claim 3 wherein the openings have a rectilinear cross-sectionalshape.
 5. The semiconductor device of claim 1 wherein the metal latticeincludes a first surface facing the bond pad, and wherein the firstsurface includes first lanes extending in a first direction, and secondlanes extending in a second direction, different than the firstdirection.
 6. The semiconductor device of claim 5 wherein the firstdirection is orthogonal to the second direction.
 7. The semiconductordevice of claim 5 wherein the barrier members include first barriermembers and second barrier members, wherein the first barrier membersextend along the first lanes, and wherein the second barrier membersextend along the second lanes.
 8. The semiconductor device of claim 7wherein the first barrier members extend continuously across the firstlanes from adjacent to a first side of the metal lattice to adjacent toa second side of the metal lattice.
 9. The semiconductor device of claim7 wherein the second barrier members have a length that is shorter thana length of the first barrier members.
 10. The semiconductor device ofclaim 7 wherein two or more of the first barrier members extend (a)along individual ones of the first lanes and (b) parallel to oneanother, and wherein two or more of the second barrier members (a)extend along individual ones of the second lanes and (b) parallel to oneanother.
 11. The semiconductor device of claim 7 wherein the firstdirection is orthogonal to the second direction, and wherein the firstbarrier members are spaced apart from the second barrier members. 12.The semiconductor device of claim 1 wherein the barrier members have arectangular cross-sectional shape.
 13. The semiconductor device of claim1 wherein the barrier members comprise tungsten, and wherein the metallattice structure comprises a material selected from the groupconsisting of copper and aluminum.
 14. The semiconductor device of claim1 wherein the barrier member includes first barrier members and secondbarrier members, wherein the first barrier members extend laterallyacross the metal lattice in a first direction and have a first length,wherein the second barrier members extend laterally across the metallattice in a second direction and have a second length, wherein thefirst length is longer than the second length, and wherein the firstdirection is orthogonal to the second direction.
 15. A semiconductordevice, comprising: a substrate including circuit elements; and ametallization structure over the substrate, wherein the metallizationstructure includes— an insulating material; a bond pad having a firstsurface exposed from the insulating material and a second surfaceopposite the first surface, wherein the bond pad is electrically coupledto at least one of the circuit elements; and a crack-inhibitingstructure beneath the second surface of the bond pad, wherein the crackinhibiting structure includes (a) first barrier members extendinglaterally in a first direction and having a first length, and (b) secondbarrier members extending laterally in a second direction and have asecond length, wherein the first length is longer than the secondlength, and wherein the first direction is different than the seconddirection.
 16. The semiconductor device of claim 15 wherein the firstbarrier members extend continuously from adjacent a first side of thebond pad to adjacent a second side of the bond pad.
 17. Thesemiconductor device of claim 15 wherein the crack-inhibiting structurefurther includes a metal layer extending generally parallel to the bondpad beneath the bond pad, wherein the metal layer has a latticearrangement, and wherein the barrier members extend vertically betweenthe metal layer and the second surface of the bond pad.
 18. Thesemiconductor device of claim 17 wherein the metal layer defines aplurality of openings, and wherein the second length is substantiallyequal to a width of the openings.
 19. The semiconductor device of claim15 wherein the bond pad is electrically coupled to the at least one ofthe circuit elements via an electrical path that does not include thecrack-inhibiting structure.
 20. The semiconductor device of claim 15wherein the insulating material includes a low-κ dielectric material.21-24. (canceled)